| PART |
Description |
Maker |
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| HM514258JP-8S HM514258ZP-8S HM514258P-8S HM514258Z |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
DB Lectro, Inc.
Glenair, Inc.
Accutek Microcircuit, Corp.
|
| V53C107HP60 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
NIC Components, Corp.
|
| HM574256ZP-35R HM574256JP-35R HM574256ZP-40 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
ON Semiconductor
|
| MSM511002A-10ZS |
1M X 1 STATIC COLUMN DRAM, 100 ns, PZIP19
|
OKI ELECTRIC INDUSTRY CO LTD
|
| M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|
| MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor
http://
|
| UPD424900LLE-A80 UPD424900LLE-A70 UPD424900LG5M-A8 |
FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
x9 Fast Page Mode DRAM X9热卖快速页面模式的DRAM
|
Powerex, Inc.
|
